Ultra Low Power NOR Flash Memory with 2M/1M/512K-bit Serial Standard and Dual I/O SPI Interface

• Single 2.3V to 3.60V supply
• Industrial Temperature Range -25C to 85C
• Serial Peripheral Interface (SPI) Compatible: Mode 0 and Mode 3
• Single, Dual IO mode
  • 2M/1M/512K x 1 bit
  • 1M/512K/256K x 2 bits
• Flexible Architecture for Code and Data Storage
  • Uniform 256-byte Page Program
  • Uniform 256-byte Page Erase
  • Uniform 4K-byte Sector Erase
  • Uniform 32K/64K-byte Block Erase
  • Full Chip Erase
• Hardware Controlled Locking of Protected Sectors by WP Pin
• 128 bit unique ID for each device
• Fast Program and Erase Speed
  • 2ms Page program time
  • 12ms Page erase time
  • 12ms 4K-byte sector erase time
  • 12ms 32K-byte block erase time
  • 12ms 64K-byte block erase time
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Ultra Low Power Consumption
  • 0.2uA Typical Deep Power Down current @3.0V
  • 9uA Typical Standby current @3.0V
  • 0.8mA Active Read current at 33MHz
  • 2.0mA Active Program or Erase current
• High Reliability
  • 100,000 Program / Erase Cycles
  • 10-year Data Retention
• Industry Standard Green Package Options
  • 8-pin SOP (150mil/208mil)/TSSOP/USON
  • KGD for SiP

The P25D22H/12H/07H is a serial interface Flash memory device designed for use in a wide variety of highvolume consumer based applications in which program code is shadowed from Flash memory into embeddedor external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it isideal for data storage as well, eliminating the need for additional data storage devices.

The erase block sizes of the device have been optimized to meet the needs of today's code and data storageapplications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently.Because certain code modules and data storage segments must reside by themselves in their own eraseregions, the wasted and unused memory space that occurs with large sectored and large block erase Flashmemory devices can be greatly reduced. This increased memory space efficiency allows additional coderoutines and data storage segments to be added while still maintaining the same overall device density.Specifically designed for use in many different systems, the device supports read, program, and eraseoperations with a wide supply voltage range of 2.3V to 3.6V. No separate voltage is required for programmingand erasing.

Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.