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Opakowanie produktów: | TSOPI-48 | Pojemność przechowywania: | 2Gbit |
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Napięcie robocze: | 2,7 V do 3,6 V | Napisz czas cyklu (TW): | 25ns |
Czas pisania strony (TPP: | 300us | ||
Podkreślić: | 2Gbit NAND Flash Chip TSOPI-48,NAND Flash Chip 2.7V-3.6V,NAND Flash Chip 25ns write cycle |
The NAND FLASH is offered with a 3.3-V VCC power supply, and with x8 I/O interface. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The page size for x8 is (2048 +spare) bytes.
To extend the lifetime of NAND flash devices, the implementation of an ECC is mandatory. The chip supports CE# don't care function. This function allows the direct download of the code from the NAND flash memory device by a microcontroller, since the CE# transitions do not stop the read operation. The devices have a Read Cache feature that improves the read throughput for large files. During cache reading, the devices load the data in a cache register while the previous data is transferred to the I/O buffers to be read. In multiplane operations, data in the page can be read out at 25 ns cycle time per byte. The I/O pins serve as the ports for command and address input as well as data input/output. This interface allows a reduced pin count and easy migration towards different densities, without any rearrangement of the footprint. Commands, Data, and Addresses are asynchronously introduced using CE#, WE#, ALE, and CLE control pins. The on-chip Program/Erase Controller automates all read, program, and erase functions including pulse repetition, where required, and internal verification and margining of data. A WP# pin is available to provide hardware protection against program and erase operations. The output pin R/B# (open drain buffer) signals the status of the device during each operation. It identifies if the program/erase/read controller is currently active. The use of an open-drain output allows the Ready/Busy pins from several memories to connect to a single pull-up resistor. In a system with multiple memories the R/B# pins can be connected all together to provide a global status signal. The Reprogram function allows the optimization of defective block management — when a Page Program operation fails the data can be directly programmed in another page inside the same array section without the time consuming serial data insertion phase. Multiplane Copy Back is also supported. Data read out after Copy Back Read (both for single and multiplane cases) is allowed. In addition, Cache Program and Multiplane Cache Program operations improve the programing throughput by programing data using the cache register. The devices are available in the TSOP48 (12 x 20 mm) package and come with the following security features: OTP (one time programmable) area, which is a restricted access area where sensitive data/code can be stored permanently. Serial number (unique identifier), which allows the devices to be uniquely identified. Contact factory for support of this feature. These security features are subject to an NDA (non-disclosure agreement) and are, therefore, not described in the datasheet. For more details about them, contact your nearest sales office
Pin Name | Pin Function |
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I/O0 - I/O7 or I/O8 - I/O15 | DATA INPUTS/OUTPUTS The I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to high-z when the chip is deselected or when the outputs are disabled. |
CLE | COMMAND LATCH ENABLE This input activates the latching of the DQ inputs inside the Command Register on the Rising edge of Write Enable (WE#). |
ALE | ADDRESS LATCH ENABLE This input activates the latching of the DQ inputs inside the Command Register on the Rising edge of Write Enable (WE#). |
/CE | CHIP ENABLE This input controls the selection of the device. When the device is busy, CE# low does not deselect the memory. The device goes into Stand-by mode when CE# goes High during the device is in Ready state. The CE# signal is ignored when device is in Busy state, and will not enter Standby mode even if the CE# goes high. |
/RE | READ ENABLE The /RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge of /RE which also increments the internal column address counter by one. |
/WE | WRITE ENABLE This input acts as clock to latch Command, Address and Data. The DQ inputs are latched on the rise edge of WE#. |
/WP | WRITE PROTECT The WP# pin, when Low, provides a hardware protection against undesired write operations. Hardware Write Protection is activated when the Write Protect pin is low. In this condition modify operation do not start and the content of the memory is not altered. Write Protect pin is not latched by Write Enable to ensure the protection even during the power up phases. |
R/B | READY/BUSY OUTPUT The Ready/Busy output is an Open Drain pin that signals the state of the memory. |
VCC | POWER The VCC supplies the power for all the operations. (Read, Write, and Erase). |
VSS | GROUND |
N.C | NO CONNECTED / DON’T USE |
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.
How to obtain the price?
We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.
What is your delivery time?
Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.
What are your payment terms?
Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.
What are the shipping options?
Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.
Osoba kontaktowa: Mr. Sun
Tel: 18824255380