Dom ProduktyADC DAC

STGW80V60DF 600V 80A Trench Gate IGBT Power Transistor for High-Speed Switching

Im Online Czat teraz

STGW80V60DF 600V 80A Trench Gate IGBT Power Transistor for High-Speed Switching

STGW80V60DF 600V 80A Trench Gate IGBT Power Transistor for High-Speed Switching
STGW80V60DF 600V 80A Trench Gate IGBT Power Transistor for High-Speed Switching STGW80V60DF 600V 80A Trench Gate IGBT Power Transistor for High-Speed Switching STGW80V60DF 600V 80A Trench Gate IGBT Power Transistor for High-Speed Switching

Duży Obraz :  STGW80V60DF 600V 80A Trench Gate IGBT Power Transistor for High-Speed Switching

Szczegóły Produktu:
Miejsce pochodzenia: CN
Nazwa handlowa: ST
Orzecznictwo: rohs
Numer modelu: STGW80V60DF
Dokument: A3CEF94ED1643C127349BA958D4...5B.pdf
Zapłata:
Minimalne zamówienie: 1
Cena: consult with
Szczegóły pakowania: T/R
Czas dostawy: 5-8 dni
Zasady płatności: T/T, Western Union
Możliwość Supply: 100 000
Kontakt Rozmawiaj teraz.

STGW80V60DF 600V 80A Trench Gate IGBT Power Transistor for High-Speed Switching

Opis
Producent: STMikroelektronika Kategoria produktu:: IGBT
Konfiguracja:: pojedynczy Napięcie kolektor-emiter VCEO Max:: 600 V
Napięcie nasycenia kolektor-emiter:: 1,85 V Maksymalne napięcie emitera bramki:: - 20 V, 20 V
Podkreślić:

600V IGBT

,

80A Power Transistor

,

Trench Gate IGBT

STGW80V60DF IGBTs Trench gate V series 600V 80A HiSpd
Features
  • Maximum junction temperature: TJ = 175 °C
  • Tail-less switching off
  • VCE(sat) = 1.85 V (typ.) @ IC = 80 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
Applications
  • Photovoltaic inverters
  • Uninterruptible power supply
  • Welding
  • Power factor correction
  • Very high frequency converters
Order code Marking Package Packaging
Order code Marking Package Packaging
STGW80V60DF GW80V60DF TO-247 Tube
STGWT80V60DF GWT80V60DF TO-3P Tube
STGW80V60DF 600V 80A Trench Gate IGBT Power Transistor for High-Speed Switching 0STGW80V60DF 600V 80A Trench Gate IGBT Power Transistor for High-Speed Switching 1STGW80V60DF 600V 80A Trench Gate IGBT Power Transistor for High-Speed Switching 2
Packaging & Shipping

Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.

Frequently Asked Questions
How to obtain the price?
We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.
What is your delivery time?
Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.
What are your payment terms?
Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.
What are the shipping options?
Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.

Szczegóły kontaktu
Shenzhen Filetti Technology Co., LTD

Osoba kontaktowa: Mr. Sun

Tel: 18824255380

Wyślij zapytanie bezpośrednio do nas (0 / 3000)