64Mb 8Mbx8 PSRAM Chip 166MHz HyperRAM IS66WVH8M8ALL 166B1LI

The IS66/67WVH8M8ALL/BLL are integrated memory devices containing 64Mbit Pseudo Static RandomAccess Memory using a self-refresh DRAM array organized as 8M words by 8 bits. The device supports a HyperBus interface, Very Low Signal Count (Address, Command and data through 8 DQ pins), Hidden Refresh Operation, and Automotive Temperature Operation, designed specially for Mobile and Automotive applications.

• HyperBus™ Low Signal Count Interface - 3.0V I/O, 11 bus signals with single ended clock (CK) or 1.8V I/O, 12 bus signals with differential clock (CK, CK#)
• High Performance - Up to 333MB/s with Double-Data Rate (DDR)
• 166-MHz clock rate (333 MB/s) at 1.8V VCC
• 100-MHz clock rate (200 MB/s) at 3.0V VCC
• Configurable Burst Characteristics with wrapped or linear burst options
• 24-ball FBGA package

Standard export packaging available. Customers can choose from cartons, wooden cases and wooden pallets according to their requirements.