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BAS16H,115 High-speed switching diode with high switching speed low capacitance and low leakage current in SOD123F SMD package

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BAS16H,115 High-speed switching diode with high switching speed low capacitance and low leakage current in SOD123F SMD package

BAS16H,115 High-speed switching diode with high switching speed low capacitance and low leakage current in SOD123F SMD package
BAS16H,115 High-speed switching diode with high switching speed low capacitance and low leakage current in SOD123F SMD package BAS16H,115 High-speed switching diode with high switching speed low capacitance and low leakage current in SOD123F SMD package BAS16H,115 High-speed switching diode with high switching speed low capacitance and low leakage current in SOD123F SMD package

Ampliación de imagen :  BAS16H,115 High-speed switching diode with high switching speed low capacitance and low leakage current in SOD123F SMD package

Datos del producto:
Lugar de origen: CN
Nombre de la marca: Nexperia
Certificación: rohs
Número de modelo: BAS16H,115
Documento: BAS16H,115.PDF
Pago y Envío Términos:
Cantidad de orden mínima: 1
Precio: consult with
Detalles de empaquetado: T/R
Tiempo de entrega: 5-8 días
Condiciones de pago: T/T, Unión Occidental
Capacidad de la fuente: 100000
Contacto Ahora Charle

BAS16H,115 High-speed switching diode with high switching speed low capacitance and low leakage current in SOD123F SMD package

descripción
Resaltar:

High switching speed SMD diode

,

Low capacitance High-speed switching diode

,

Low leakage current BAS16H

,

115 diode

BAS16H,115 High-speed switching diode, encapsulated in a small and flat lead SOD123F Surface-Mounted Device (SMD) plastic package.

Features and benefits
  • High switching speed: trr ≤ 4 ns
  • Low capacitance
  • Low leakage current
  • Reverse voltage: VR ≤ 100 V
  • Repetitive peak reverse voltage: VRRM ≤ 100 V
Technical Parameters

Per diode

Symbol Parameter Conditions Min Typ Max Unit
VR reverse voltage - - - 100 V
IR reverse current VR = 80 V; Tamb = 25 °C - - 0.5 µA
trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C - - 4 ns
BAS16H,115 High-speed switching diode with high switching speed low capacitance and low leakage current in SOD123F SMD package 0BAS16H,115 High-speed switching diode with high switching speed low capacitance and low leakage current in SOD123F SMD package 1BAS16H,115 High-speed switching diode with high switching speed low capacitance and low leakage current in SOD123F SMD package 2
Packaging & Shipping

Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.

Frequently Asked Questions
How to obtain the price?

We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.

What is your delivery time?

Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.

What are your payment terms?

Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.

What are the shipping options?

Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.

etiqueta:

Chip convertidor digital,

chip convertidor digital,

Chip multiplexor

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