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MT29F8G08ABACAWP-IT_C 8Gb NAND Flash Memory Supports Single-programming Operation, With High Reliability And Data Retention Capability

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MT29F8G08ABACAWP-IT_C 8Gb NAND Flash Memory Supports Single-programming Operation, With High Reliability And Data Retention Capability

MT29F8G08ABACAWP-IT_C 8Gb NAND Flash Memory Supports Single-programming Operation, With High Reliability And Data Retention Capability
MT29F8G08ABACAWP-IT_C 8Gb NAND Flash Memory Supports Single-programming Operation, With High Reliability And Data Retention Capability MT29F8G08ABACAWP-IT_C 8Gb NAND Flash Memory Supports Single-programming Operation, With High Reliability And Data Retention Capability MT29F8G08ABACAWP-IT_C 8Gb NAND Flash Memory Supports Single-programming Operation, With High Reliability And Data Retention Capability

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Datos del producto:
Lugar de origen: CN
Nombre de la marca: micron
Certificación: rohs
Número de modelo: MT29F8G08ABACAWP-IT: C
Documento: C400999_0C77FE4F18E863E3B0D...A9.pdf
Pago y Envío Términos:
Cantidad de orden mínima: 1
Precio: consult with
Detalles de empaquetado: T/R
Tiempo de entrega: 5-8 días
Condiciones de pago: T/T, Unión Occidental
Capacidad de la fuente: 100000
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MT29F8G08ABACAWP-IT_C 8Gb NAND Flash Memory Supports Single-programming Operation, With High Reliability And Data Retention Capability

descripción
Temperatura de funcionamiento: -40℃~+85℃ Voltaje de funcionamiento: 2.7V~3.6V
Tipo de interfaz: Paralelo Capacidad de almacenamiento: 8Gbits
Frecuencia de reloj (fc): - Tiempo de escritura de página (Tpp): 200 us
Resaltar:

8Gb NAND Flash Memory

,

NAND Flash with high reliability

,

Flash memory with data retention

MT29F8G08ABACAWP-IT_C 8Gb NAND Flash Memory
High-performance 8Gb NAND Flash Memory supporting single-programming operation with exceptional reliability and data retention capabilities.
Product Overview
The MT29F8G08ABACAWP-IT_C is part of Micron's comprehensive NAND Flash Memory family, offering robust performance for industrial and commercial applications.
Key Features
  • Open NAND Flash Interface (ONFI) 1.0-compliant
  • Single-level cell (SLC) technology for enhanced reliability
  • Advanced command set including program page cache mode and read page cache mode
  • One-time programmable (OTP) mode for secure data storage
  • Block lock functionality (1.8V only)
  • Programmable drive strength for optimized performance
  • Two-plane commands and multi-die (LUN) operations
  • Read unique ID capability
  • Internal data move operations
  • High endurance: 60,000 PROGRAM/ERASE cycles
  • Extended data retention compliant with JESD47G standards
Memory Organization
  • Page size x8: 4320 bytes (4096 + 224 bytes)
  • Page size x16: 2160 words (2048 + 112 words)
  • Block size: 64 pages (256K + 14K bytes)
  • Plane size: 2 planes x 2048 blocks per plane
  • Device size: 8Gb: 4096 blocks
  • Device size: 16Gb: 8192 blocks
Performance Specifications
  • Asynchronous I/O performance: tRC/tWC: 20ns (3.3V), 30ns (1.8V)
  • Array performance: Read page: 25µs, Program page: 200µs (TYP), Erase block: 2ms (TYP)
Operating Conditions
  • Operating voltage range: VCC: 2.7-3.6V or 1.7-1.95V
  • Operating temperature: Industrial (IT): -40ºC to +85ºC
Package Options
  • 48-pin TSOP type 1, CPL2
  • 63-ball VFBGA
Signal Description
Signal Type Description
ALE Input Address latch enable: Loads an address from I/O[7:0] into the address register.
CE# Input Chip enable: Enables or disables one or more die (LUNs) in a target.
CLE Input Command latch enable: Loads a command from I/O[7:0] into the command register.
LOCK Input When LOCK is HIGH during power-up, the BLOCK LOCK function is enabled.
RE# Input Read enable: Transfers serial data from the NAND Flash to the host system.
WE# Input Write enable: Transfers commands, addresses, and serial data from the host system to the NAND Flash.
WP# Input Write protect: Enables or disables array PROGRAM and ERASE operations.
I/O[7:0] (x8)
I/O[15:0] (x16)		 I/O Data inputs/outputs: The bidirectional I/Os transfer address, data, and command information.
R/B# Output Ready/busy: An open-drain, active-low output that requires an external pull-up resistor.
VCC Supply VCC: Core power supply
VSS Supply VSS: Core ground connection
NC - No connect: NCs are not internally connected. They can be driven or left unconnected.
DNU - Do not use: DNUs must be left unconnected.
Product Images
MT29F8G08ABACAWP-IT_C 8Gb NAND Flash Memory Supports Single-programming Operation, With High Reliability And Data Retention Capability 0 MT29F8G08ABACAWP-IT_C 8Gb NAND Flash Memory Supports Single-programming Operation, With High Reliability And Data Retention Capability 1 MT29F8G08ABACAWP-IT_C 8Gb NAND Flash Memory Supports Single-programming Operation, With High Reliability And Data Retention Capability 2
Packaging & Shipping
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.
Frequently Asked Questions
How to obtain the price?
We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.
What is your delivery time?
Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.
What are your payment terms?
Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.
What are the shipping options?
Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.

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