MB85RC16PNF-G-JNERE1 16 K (2 K × 8) Bit I2C Memory FRAM

The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip configured as 2,048 words × 8 bits, utilizing ferroelectric process and silicon gate CMOS process technologies for forming nonvolatile memory cells. Unlike SRAM, the MB85RC16 retains data without requiring a backup battery. The memory cells support at least 10¹⁰ read/write operations per bit, significantly exceeding the endurance of other nonvolatile memory products.

The MB85RC16 enables byte-level writing without the long write times required by Flash memory and E²PROM, eliminating the need for write busy state waiting sequences.

• Bit configuration: 2,048 words × 8 bits
• Operating power supply voltage: 2.7 V to 3.6 V
• Operating frequency: 1 MHz (Max)
• Two-wire serial interface: Fully controllable by serial clock (SCL) and serial data (SDA)
• Operating temperature range: −40°C to +85°C
• Data retention: 10 years (+75°C)
• Read/Write endurance: 10¹⁰ times
• Package: Plastic SOP, 8-pin (FPT-8P-M02)
• Low power consumption: Operating current 0.1mA (Max @1 MHz), Standby current 0.1 μA (Typ)

Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.