Rumah Produk

Chip Memori DRAM

Cina Chip Memori DRAM

Chip Memori DRAM FBGA-200 8Gb X16 X2 Channel LPDDR4X IS43LQ32256B-062BLI

Katalog Produk:Memori> Dynamic Random Access Memory (DRAM)

Kemasan universal:FBGA-200

RoHS:Kepatuhan
2Gb F Die DRAM Memory Chip Dynamic Random Access Memory DDR3 X16 K4B2G1646F-BCMA

Katalog Produk:Memori> Dynamic Random Access Memory (DRAM)

Kemasan universal:BGA, FBGA

RoHS:Kepatuhan
Chip DRAM DDR3L X16 4Gb Industri F60C1A0004-M7 F60C1A0004-M79W

Katalog Produk:Memori> Dynamic Random Access Memory (DRAM)

Kemasan Universal:FBGA-96

RoHS:Kepatuhan
Chip Memori DRAM 512MB 16bit 1.575V FBGA-96 H5TQ4G63EFR-RDC

Katalog Barang:Memori> Dynamic Random Access Memory (DRAM)

Kemasan tujuan umum:FBGA-96

Metode pemasangan:Pemasangan Pemasangan Permukaan
Industrial DRAM Memory Chip DDR3l DDR3L X16 2Gb F60C1A0002-M69W

Katalog Produk:Memori> Dynamic Random Access Memory (DRAM)

Kemasan universal:FBGA-96

RoHS:Kepatuhan
512K Bits Chip DRAM SYNCHRONOUS Dynamic RAM IS42S32200L-7BLI

Katalog Produk:Memori> Dynamic Random Access Memory (DRAM)

Kemasan universal:BGA

RoHS:Kepatuhan
Chip Memori DRAM C Die 8Gb DDR4 SDRAM K4A8G165WC-BITD

Katalog Produk:Memori> Dinamis Access Access Memory Dram

Kemasan universal:FBGA-96

RoHS:Kepatuhan
Chip Memori Dram DDR4 16Gb 1.2V SDRAM H5ANAG6NCJR-XNC

Katalog Produk:Memori> Memori Akses Acak Dinamis

Kemasan Universal:FBGA-96

RoHS:Kepatuhan
W9825G6JH-6I 4M 4BANKS 16BITS SDRAM High-speed Synchronous Dynamic Random Access Memory (memori akses acak dinamis sinkron kecepatan tinggi)

Suhu Operasional:-40℃~+85℃

Tegangan Operasi:3V~3.6V

Arsitektur memori (format):SDRAM
W971GG6NB-25 8M 8BANKS 16BIT 1G Bits DDR2 SDRAM Dua Transfer Data Per Siklus Jam

Suhu Operasional:0℃~+85℃

Tegangan Operasi:1.7V~1.9V

Arsitektur memori (format):SDRAM DDR2
W9825G6KH-6I 4M 16BITS SDRAM Memori Akses Acak Dinamis Sinkron Berkecepatan Tinggi

Suhu Operasional:-40℃~+85℃

Tegangan Operasi:3V~3.6V

Arsitektur memori (format):SDRAM
MT40A512M16LY-062E IT:E 8Gb: x8 x16 Otomotif DDR4 SDRAM 1.6GHz 1.14V~1.26V

Suhu Operasional:0℃~+95℃

Tegangan Operasi:1.14V~1.26V

Arsitektur memori (format):SDRAM DDR

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Telusuri kategori：

Chip Memori DRAM

Cina Chip Memori DRAM

Chip Memori DRAM FBGA-200 8Gb X16 X2 Channel LPDDR4X IS43LQ32256B-062BLI

2Gb F Die DRAM Memory Chip Dynamic Random Access Memory DDR3 X16 K4B2G1646F-BCMA

Chip DRAM DDR3L X16 4Gb Industri F60C1A0004-M7 F60C1A0004-M79W

Chip Memori DRAM 512MB 16bit 1.575V FBGA-96 H5TQ4G63EFR-RDC

Industrial DRAM Memory Chip DDR3l DDR3L X16 2Gb F60C1A0002-M69W

512K Bits Chip DRAM SYNCHRONOUS Dynamic RAM IS42S32200L-7BLI

Chip Memori DRAM C Die 8Gb DDR4 SDRAM K4A8G165WC-BITD

Chip Memori Dram DDR4 16Gb 1.2V SDRAM H5ANAG6NCJR-XNC

W9825G6JH-6I 4M 4BANKS 16BITS SDRAM High-speed Synchronous Dynamic Random Access Memory (memori akses acak dinamis sinkron kecepatan tinggi)

W971GG6NB-25 8M 8BANKS 16BIT 1G Bits DDR2 SDRAM Dua Transfer Data Per Siklus Jam

W9825G6KH-6I 4M 16BITS SDRAM Memori Akses Acak Dinamis Sinkron Berkecepatan Tinggi

MT40A512M16LY-062E IT:E 8Gb: x8 x16 Otomotif DDR4 SDRAM 1.6GHz 1.14V~1.26V

Unit Mikrokontroler MCU

UART SPI MCU Mikrokontroler Arm Cortex-A35 Mikroprosesor Chip MA35D16F887C

Atmel 8 Bit MCU Unit Mikrokontroler 16 32KBytes Flash yang Dapat Diprogram ATMEGA168PA-AU

128kB 8bit MCU Microcontroller Unit AVR Core Microcomputer Chip ATMEGA128A-AU

FPGA Field Programmable Gate Array

XC7A75T-2FGG484I 75520LE 11800ALM CPLD Lapangan Perangkat yang dapat diprogram Array Logika

XC6SLX9-2CSG324I 9152LE 200I/O Chip Perangkat Logika Array yang Dapat Diprogram Bidang Array Gerbang Lapangan

XC7Z020-2CLG484I 2 X 32 KB Cpld Chips Chip Logika yang Dapat Diprogram 85000LE