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MT29F1G08ABAEAWP-IT:E 1Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability

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MT29F1G08ABAEAWP-IT:E 1Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability

MT29F1G08ABAEAWP-IT:E 1Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability
MT29F1G08ABAEAWP-IT:E 1Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability MT29F1G08ABAEAWP-IT:E 1Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability MT29F1G08ABAEAWP-IT:E 1Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability MT29F1G08ABAEAWP-IT:E 1Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability

تصویر بزرگ :  MT29F1G08ABAEAWP-IT:E 1Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability

جزئیات محصول:
محل منبع: CN
نام تجاری: micron
گواهی: rohs
شماره مدل: MT29F1G08ABAEAWP-IT:E
سند: DB4E5E94D8E9A8F249785434F20...FD.pdf
پرداخت:
مقدار حداقل تعداد سفارش: 1
قیمت: consult with
جزئیات بسته بندی: T/R
زمان تحویل: 5-8 روز
شرایط پرداخت: T/T، وسترن یونیون
قابلیت ارائه: 100000
مخاطب حالا حرف بزن

MT29F1G08ABAEAWP-IT:E 1Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability

شرح
دمای عملیاتی: -40℃~+85℃ ولتاژ عملیاتی: 2.7V~3.6V
نوع رابط: موازی ظرفیت ذخیره سازی: 1 گیگابیت
فرکانس ساعت (fc): - زمان نوشتن صفحه (Tpp): 200 ما

MT29F1G08ABAEAWP-IT:E 8Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability

NAND Flash MemoryMT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC

Features
  • Open NAND Flash Interface (ONFI) 1.0-compliant1
  • Single-level cell (SLC) technology
  • Organization
    • Page size x8: 2112 bytes (2048 + 64 bytes)
    • Page size x16: 1056 words (1024 + 32 words)
    • Block size: 64 pages (128K + 4K bytes)
    • Plane size: 2 planes x 512 blocks per plane
    • Device size: 1Gb: 1024 blocks
  • Asynchronous I/O performance
    • tRC/tWC: 20ns (3.3V), 25ns (1.8V)
  • Array performance
    • Read page: 25µs
    • Program page: 200µs (TYP, 3.3V and 1.8V)
    • Erase block: 700µs (TYP)
  • Command set: ONFI NAND Flash Protocol
  • Advanced command set
    • Program page cache mode
    • Read page cache mode
    • One-time programmable (OTP) mode
    • Two-plane commands
    • Read unique ID
    • Internal data move
    • Block lock (1.8V only)
  • Operation status byte provides software method fordetecting
    • Operation completion
    • Pass/fail condition
    • Write-protect status
  • Internal data move operations supported within thedevice from which data is read
  • Ready/busy# (R/B#) signal provides a hardwaremethod for detecting operation completion
  • WP# signal: write protect entire device
  • First block (block address 00h) is valid when shipped from factory with ECC. For minimum requiredECC, see Error Management.
  • Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
  • RESET (FFh) required as first command after power-on
  • Alternate method of device initialization (Nand_Init) after power up3 (contact factory)
  • Quality and reliability
    • Data retention: JESD47 compliant; see qualification report
    • Endurance: 100,000 PROGRAM/ERASE cycles
  • Operating Voltage Range
    • VCC: 2.7–3.6V
    • VCC: 1.7–1.95V
  • Operating temperature:
    • Commercial (CT): –0ºC to +70ºC
    • Industrial (IT): –40ºC to +85ºC
  • Package
    • 48-pin TSOP Type 1, CPL2
Cycle I/O7 I/O6 I/O5 I/O4 I/OQ3 I/O2 I/O1 I/O0 Second LOW LOW LOW LOW CA111 CA10 CA9 CA8 Third BA7 BA63 PA5 PA4 PA3 PA2 PA1 PA0 Fourth BA15 BA14 BA13 BA12 BA11 BA10 BA9 BA8
MT29F1G08ABAEAWP-IT:E 1Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability 0 MT29F1G08ABAEAWP-IT:E 1Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability 1 MT29F1G08ABAEAWP-IT:E 1Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability 2 MT29F1G08ABAEAWP-IT:E 1Gb NAND Flash Memory Supports Single-programming Operation With High Reliability And Data Retention Capability 3
Packaging & Shipping

Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.

Frequently Asked Questions
How to obtain the price?

We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.

What is your delivery time?

Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.

What are your payment terms?

Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.

What are the shipping options?

Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.

اطلاعات تماس
Shenzhen Filetti Technology Co., LTD

تماس با شخص: Mr. Sun

تلفن: +8618824255380

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