3.3V 1Gb SLC NAND Flash Memory IMS1G083ZZM1S-WP

Offered in 128Mx8bit, the lMS1G083ZZM1S-WP is a 1G-bit NAND Flash Memory with spare 32Mbi. The device is offered in 3.3v vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400us on the (2K+64Byte) page and an erase operation can be performed in typical 4.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and maintaining of data. The IMS1G083ZZM1S-WP is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

• Voltage Supply - Vcc: 3.3V (2.7V~ 3.6V)
• Organization
  • Memory Cell Array: (128M + 4M) x 8bit
  • Page Size: (2K + 64)Byte
  • Data Register: (2K+ 64)x8bit
  • Block Erase: (128K + 4K)Byte
• Automatic Program and Erase
  • Page Program: (2K + 64)Byte
• Page Read Operation
  • Random Read: 25ns (Max.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
  • Program/Erase Lockout During Power Transitions
• Command Driven Operation
• Unique ID for Copyright Protection
• Package:
  • IMS1G083ZZM1S-WP: Pb-Free, Halogen-Free
  • Package 48 Pin TSOP1 (12 x 20/0.5 mm pitch)
• Serial Access: 25ns(Min.)
• Data Transfer Rate: SDR20Mhz(40Mbps)
• Fast Write Cycle Time
  • Page Program time: 400us(Typ.)
  • Block Erase Time: 4.5ms(Typ.)

Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.