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| نمط التركيب:: | سمد/سمت | الحزمة / القضية:: | دباك-3 (TO-252-3) |
|---|---|---|---|
| قطبية الترانزستور:: | نبن | جامع - باعث الجهد VCEO ماكس:: | 100 فولت |
| باعث - الجهد الأساسي VEBO:: | 5 خامسا | PD - تبديد الطاقة:: | 15 واط |
| إبراز: | 100 V Bipolar Transistor,3.0 A BJT,SMD/SMT NPN Power Transistor,3.0 A BJT,SMD/SMT NPN Power Transistor |
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| Rating | Symbol | MJD31, MJD32 | MJD31C, MJD32C | Max | Unit |
|---|---|---|---|---|---|
| Collector−Emitter Voltage | VCEO | 40 | 100 | Vdc | |
| Collector−Base Voltage | VCB | 40 | 100 | Vdc | |
| Emitter−Base Voltage | VEB | 5.0 | Vdc | ||
| Collector Current − Continuous | IC | 3.0 | Adc | ||
| Collector Current − Peak | ICM | 5.0 | Adc | ||
| Base Current | IB | 1.0 | Adc | ||
| Total Power Dissipation @ TC = 25°C | PD | 15 | W | ||
| Derate above 25°C | 0.12 | W/°C | |||
| Total Power Dissipation @ TA = 25°C | PD | 1.56 | W | ||
| Derate above 25°C | 0.012 | W/°C | |||
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 | °C | ||
| ESD − Human Body Model | HBM | 3B | V | ||
| ESD − Machine Model | MM | C | V |
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.
اتصل شخص: Mr. Sun
الهاتف :: 18824255380
