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MT41K256M16TW-107:P 4Gb: x4 x8 x16 DDR3L SDRAM 933MHz 4Gbit

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MT41K256M16TW-107:P 4Gb: x4 x8 x16 DDR3L SDRAM 933MHz 4Gbit

MT41K256M16TW-107:P 4Gb: x4 x8 x16 DDR3L SDRAM 933MHz 4Gbit
MT41K256M16TW-107:P 4Gb: x4 x8 x16 DDR3L SDRAM 933MHz 4Gbit MT41K256M16TW-107:P 4Gb: x4 x8 x16 DDR3L SDRAM 933MHz 4Gbit MT41K256M16TW-107:P 4Gb: x4 x8 x16 DDR3L SDRAM 933MHz 4Gbit MT41K256M16TW-107:P 4Gb: x4 x8 x16 DDR3L SDRAM 933MHz 4Gbit

Imagem Grande :  MT41K256M16TW-107:P 4Gb: x4 x8 x16 DDR3L SDRAM 933MHz 4Gbit

Detalhes do produto:
Lugar de origem: NC
Marca: micron
Certificação: rohs
Número do modelo: MT41K256M16TW-107: P
Documento: C253882_073A45851B86D33155E...61.pdf
Condições de Pagamento e Envio:
Quantidade de ordem mínima: 1
Preço: consult with
Detalhes da embalagem: T/R
Tempo de entrega: 5-8 dias
Termos de pagamento: T/T, União Ocidental
Habilidade da fonte: 100.000
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MT41K256M16TW-107:P 4Gb: x4 x8 x16 DDR3L SDRAM 933MHz 4Gbit

descrição
Temperatura operacional: 0℃~+95℃ Tensão operacional: 1,283 V ~ 1,45 V
Arquitetura de memória (formato): DDR3L SDRAM Capacidade de armazenamento: 4Gbit
Frequência de pulso de disparo (fc): 933MHz Corrente operacional: 32mA
Destacar:

4Gb DDR3L SDRAM memory chip

,

933MHz DDR3L DRAM chip

,

x16 DDR3L SDRAM with warranty

MT41K256M16TW-107:P 4Gb DDR3L SDRAM
x4 x8 x16 DDR3L SDRAM 933MHz 4Gbit Memory Module
Product Overview
DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM (Die Rev :E) data sheet specifications when running in 1.5V compatible mode.
Memory Configurations
MT41K1G4 - 128 Meg x 4 x 8 banks
MT41K512M8 - 64 Meg x 8 x 8 banks
MT41K256M16 - 32 Meg x 16 x 8 banks
Key Features
  • VDD = VDDQ = 1.35V (1.283-1.45V)
  • Backward compatible to VDD = VDDQ = 1.5V ±0.075V
  • Supports DDR3L devices to be backward compatible in 1.5V applications
  • Differential bidirectional data strobe
  • 8n-bit prefetch architecture
  • Differential clock inputs (CK, CK#)
  • 8 internal banks
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Programmable CAS (READ) latency (CL)
  • Programmable posted CAS additive latency (AL)
  • Programmable CAS (WRITE) latency (CWL)
  • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Self refresh mode
  • TC of 105°C
  • 64ms, 8192-cycle refresh up to 85°C
  • 32ms, 8192-cycle refresh at >85°C to 95°C
  • 16ms, 8192-cycle refresh at >95°C to 105°C
Speed Grade Specifications
Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL tRCD (ns) tRP (ns) CL (ns)
-093 1, 2 2133 14-14-14 13.09 13.09 13.09
-107 1 1866 13-13-13 13.91 13.91 13.91
-125 1600 11-11-11 13.75 13.75 13.75
Product Images
MT41K256M16TW-107:P 4Gb: x4 x8 x16 DDR3L SDRAM 933MHz 4Gbit 0 MT41K256M16TW-107:P 4Gb: x4 x8 x16 DDR3L SDRAM 933MHz 4Gbit 1 MT41K256M16TW-107:P 4Gb: x4 x8 x16 DDR3L SDRAM 933MHz 4Gbit 2
Packaging & Shipping
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.
Frequently Asked Questions
How to obtain the price?
We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.
What is your delivery time?
Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.
What are your payment terms?
Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.
What are the shipping options?
Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.

etiqueta:

Dram chip,

batatas fritas,

Chip de memória da gole

Contacto
Shenzhen Filetti Technology Co., LTD

Pessoa de Contato: Mr. Sun

Telefone: +8618824255380

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