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MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

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MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V
MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

Büyük resim :  MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

Ürün ayrıntıları:
Menşe yeri: CN
Marka adı: micron
Sertifika: rohs
Model numarası: MT2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2B2
Belge: 2C1890E3DBCDCF6D0CD38142820...AE.pdf
Ödeme & teslimat koşulları:
Min sipariş miktarı: 1
Fiyat: consult with
Ambalaj bilgileri: T/R
Teslim süresi: 5-8 gün
Ödeme koşulları: T/T, Western Union
Yetenek temini: 100000
İletişim Şimdi konuşalım.

MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

Açıklama
Çalışma Sıcaklığı: -40°C~+85°C Çalışma Gerilimi: 2.7V~3.6V
Arayüz Türü: Paralel Depolama Kapasitesi: 1Gbit
Saat Frekansı (fc): - Sayfa yazma süresi (Tpp): 200us
Vurgulamak:

1Gb NAND Flash Memory 200us

,

X8 X16 NAND Flash 3.6V

,

Parallel NAND Flash Memory 2.7V

MT29F1G08ABAEAWP:E 1Gb X8, X16 NAND Flash Memory
8Gb NAND Flash Memory supporting single-programming operation with high reliability and data retention capability. Operating voltage: 2.7V~3.6V, 200µs parallel interface.
Compatible Models
MT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4, MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC
Key Features
  • Open NAND Flash Interface (ONFI) 1.0-compliant
  • Single-level cell (SLC) technology
  • Advanced command set including program/read page cache mode
  • One-time programmable (OTP) mode
  • Two-plane commands and internal data move operations
  • Ready/busy signal for hardware operation detection
  • Write protect entire device capability
Memory Organization
  • Page size x8: 2112 bytes (2048 + 64 bytes)
  • Page size x16: 1056 words (1024 + 32 words)
  • Block size: 64 pages (128K + 4K bytes)
  • Plane size: 2 planes x 512 blocks per plane
  • Device size: 1Gb: 1024 blocks
Performance Specifications
  • Asynchronous I/O performance: tRC/tWC: 20ns (3.3V), 25ns (1.8V)
  • Read page: 25µs
  • Program page: 200µs (TYP, 3.3V and 1.8V)
  • Erase block: 700µs (TYP)
Operating Conditions
  • Voltage Range: VCC: 2.7-3.6V / 1.7-1.95V
  • Operating Temperature: Commercial (CT): 0ºC to +70ºC / Industrial (IT): -40ºC to +85ºC
  • Endurance: 100,000 PROGRAM/ERASE cycles
  • Package: 48-pin TSOP Type 1, CPL2
Technical Diagrams
MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V 0 MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V 1 MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V 2 MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V 3
Packaging & Shipping
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.
Frequently Asked Questions
How to obtain the price?
We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.
What is your delivery time?
Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.
What are your payment terms?
Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.
What are the shipping options?
Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.

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