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MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

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MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V
MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

大画像 :  MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

商品の詳細:
起源の場所: CN
ブランド名: micron
証明: rohs
モデル番号: MT29F1G08ABAEAWP:E
ドキュメント: 2C1890E3DBCDCF6D0CD38142820...AE.pdf
お支払配送条件:
最小注文数量: 1
価格: consult with
パッケージの詳細: 送受信
受渡し時間: 5~8日
支払条件: T/T、ウェスタンユニオン
供給の能力: 2623236、
連絡先 今雑談しなさい

MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

説明
動作温度: -40℃~+85℃ 動作電圧: 2.7V~3.6V
インターフェースの種類: 平行 ストレージ容量: 1Gbit
クロック周波数(fc): - ページ書き込み時間 (Tpp): 200ドル
ハイライト:

1Gb NAND Flash Memory 200us

,

X8 X16 NAND Flash 3.6V

,

Parallel NAND Flash Memory 2.7V

MT29F1G08ABAEAWP:E 1Gb X8, X16 NAND Flash Memory
8Gb NAND Flash Memory supporting single-programming operation with high reliability and data retention capability. Operating voltage: 2.7V~3.6V, 200µs parallel interface.
Compatible Models
MT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4, MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC
Key Features
  • Open NAND Flash Interface (ONFI) 1.0-compliant
  • Single-level cell (SLC) technology
  • Advanced command set including program/read page cache mode
  • One-time programmable (OTP) mode
  • Two-plane commands and internal data move operations
  • Ready/busy signal for hardware operation detection
  • Write protect entire device capability
Memory Organization
  • Page size x8: 2112 bytes (2048 + 64 bytes)
  • Page size x16: 1056 words (1024 + 32 words)
  • Block size: 64 pages (128K + 4K bytes)
  • Plane size: 2 planes x 512 blocks per plane
  • Device size: 1Gb: 1024 blocks
Performance Specifications
  • Asynchronous I/O performance: tRC/tWC: 20ns (3.3V), 25ns (1.8V)
  • Read page: 25µs
  • Program page: 200µs (TYP, 3.3V and 1.8V)
  • Erase block: 700µs (TYP)
Operating Conditions
  • Voltage Range: VCC: 2.7-3.6V / 1.7-1.95V
  • Operating Temperature: Commercial (CT): 0ºC to +70ºC / Industrial (IT): -40ºC to +85ºC
  • Endurance: 100,000 PROGRAM/ERASE cycles
  • Package: 48-pin TSOP Type 1, CPL2
Technical Diagrams
MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V 0 MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V 1 MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V 2 MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V 3
Packaging & Shipping
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.
Frequently Asked Questions
How to obtain the price?
We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.
What is your delivery time?
Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.
What are your payment terms?
Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.
What are the shipping options?
Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.

連絡先の詳細
Shenzhen Filetti Technology Co., LTD

コンタクトパーソン: Mr. Sun

電話番号: +8618824255380

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