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MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

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MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V
MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

Großes Bild :  MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

Produktdetails:
Herkunftsort: CN
Markenname: micron
Zertifizierung: rohs
Modellnummer: MT29F1G08ABAEAWP: E
Dokument: 2C1890E3DBCDCF6D0CD38142820...AE.pdf
Zahlung und Versand AGB:
Min Bestellmenge: 1
Preis: consult with
Verpackung Informationen: T/R
Lieferzeit: 5-8 Tage
Zahlungsbedingungen: T/T, Western Union
Versorgungsmaterial-Fähigkeit: 100000
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MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V

Beschreibung
Betriebstemperatur: -40℃~+85℃ Betriebsspannung: 2.7V~3.6V
Schnittstellentyp: Parallel Speicherkapazität: 1Gbit
Taktfrequenz (fc): - Seitenschreibzeit (Tpp): 200 us
Hervorheben:

1Gb NAND Flash Memory 200us

,

X8 X16 NAND Flash 3.6V

,

Parallel NAND Flash Memory 2.7V

MT29F1G08ABAEAWP:E 1Gb X8, X16 NAND Flash Memory
8Gb NAND Flash Memory supporting single-programming operation with high reliability and data retention capability. Operating voltage: 2.7V~3.6V, 200µs parallel interface.
Compatible Models
MT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4, MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC
Key Features
  • Open NAND Flash Interface (ONFI) 1.0-compliant
  • Single-level cell (SLC) technology
  • Advanced command set including program/read page cache mode
  • One-time programmable (OTP) mode
  • Two-plane commands and internal data move operations
  • Ready/busy signal for hardware operation detection
  • Write protect entire device capability
Memory Organization
  • Page size x8: 2112 bytes (2048 + 64 bytes)
  • Page size x16: 1056 words (1024 + 32 words)
  • Block size: 64 pages (128K + 4K bytes)
  • Plane size: 2 planes x 512 blocks per plane
  • Device size: 1Gb: 1024 blocks
Performance Specifications
  • Asynchronous I/O performance: tRC/tWC: 20ns (3.3V), 25ns (1.8V)
  • Read page: 25µs
  • Program page: 200µs (TYP, 3.3V and 1.8V)
  • Erase block: 700µs (TYP)
Operating Conditions
  • Voltage Range: VCC: 2.7-3.6V / 1.7-1.95V
  • Operating Temperature: Commercial (CT): 0ºC to +70ºC / Industrial (IT): -40ºC to +85ºC
  • Endurance: 100,000 PROGRAM/ERASE cycles
  • Package: 48-pin TSOP Type 1, CPL2
Technical Diagrams
MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V 0 MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V 1 MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V 2 MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V 3
Packaging & Shipping
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.
Frequently Asked Questions
How to obtain the price?
We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.
What is your delivery time?
Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.
What are your payment terms?
Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.
What are the shipping options?
Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.

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