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W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM High-speed Synchronous Dynamic Random Access Memory

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W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM High-speed Synchronous Dynamic Random Access Memory

W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM High-speed Synchronous Dynamic Random Access Memory
W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM High-speed Synchronous Dynamic Random Access Memory W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM High-speed Synchronous Dynamic Random Access Memory W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM High-speed Synchronous Dynamic Random Access Memory

Large Image :  W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM High-speed Synchronous Dynamic Random Access Memory

Product Details:
Place of Origin: CN
Brand Name: Winbond
Certification: rohs
Model Number: W9864G6KH-6I
Document: CFD5B3B2027CC778F37C3A755AA...4C.pdf
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: consult with
Packaging Details: T/R
Delivery Time: 5-8days
Payment Terms: T/T,Western Union
Supply Ability: 100000
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W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM High-speed Synchronous Dynamic Random Access Memory

Description
Operating Temperature: -40℃~+85℃ Operating Voltage: 3V~3.6V
Memory Architecture (format): SDRAM Storage Capadity: 64Mbit
Clock Frequency (fc): 166MHz Operating Current: -
Highlight:

1M 4 banks 16 bits SDRAM

,

high-speed synchronous DRAM memory

,

16 bits SDRAM memory chip

W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM
High-speed Synchronous Dynamic Random Access Memory
Product Specifications
Part Number Speed Grade Self Refresh Current (Max) Operating Temperature
W9864G6KH-5 200MHz/CL3 2mA 0°C ~ 70°C
W9864G6KH-6 166MHz/CL3 2mA 0°C ~ 70°C
W9864G6KH-6I 166MHz/CL3 2mA -40°C ~ 85°C
W9864G6KH-7 143MHz/CL3 2mA 0°C ~ 70°C
Key Features
  • 3.3V ± 0.3V for -5, -6 and -6I speed grades power supply
  • 2.7V~3.6V for -7 speed grades power supply
  • Up to 200 MHz Clock Frequency
  • 1,048,576 words * 4 banks * 16 bits organization
  • Self Refresh Current: Standard and Low Power
  • CAS Latency: 2 and 3
  • Burst Length: 1, 2, 4, 8 and full page
  • Sequential and Interleave Burst
  • Byte Data Controlled by LDQM, UDQM
  • Auto-precharge and Controlled Precharge
  • Burst Read, Single Writes Mode
  • 4K Refresh Cycles/64 mS
  • Interface: LVTTL
  • Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
Product Images
W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM High-speed Synchronous Dynamic Random Access Memory 0 W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM High-speed Synchronous Dynamic Random Access Memory 1 W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM High-speed Synchronous Dynamic Random Access Memory 2
Packaging & Shipping
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.
Frequently Asked Questions
How to obtain the price?
We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.
What is your delivery time?
Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.
What are your payment terms?
Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.
What are the shipping options?
Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.

Tag:

dram chip,

chip dram,

dram memory chips

Contact Details
Shenzhen Filetti Technology Co., LTD

Contact Person: Mr. Sun

Tel: +8618824255380

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