2Gb F Die DRAM Memory Chip Dynamic Random Access Memory DDR3 X16 K4B2G1646F-BCMA

Dynamic Random Access Memory DRAM 2Gb F-die DDR3 SDRAM X16 K4B2G1646F-BCMA

• JEDEC standard 1.5v + 0.075V Power Supply
• VDoo = 1.5V + 0.075V
• 400 MHz fcx for 800Mb/sec/pin, 533MHz fck for 1066Mb/sec/pin, 667MHz fck for 1333Mb/sec/pin, 800MHz fck for 1600Mb/sec/pin, 933MHz fck for 1866Mb/sec/pin, 1066MHz fck for 2133Mb/sec/pin
• 8 Banks
• Programmable CAS Latency (posted CAS): 5,6,7,8,9,10,11,13,14
• Programmable Additive Latency: 0, CL-2 or CL-1 clock
• Programmable CAS Write Latency (CWL)=5(DDR3-800),6(DDR3-1066),7(DDR3-1333),8(DDR3-1600),9(DDR3-1866),10(DDR3-2133)
• 8-bit pre-fetch
• Burst Length: 8 (interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write
• Bi-directional Differential Data-Strobe
• The 2Gb DDR3 SDRAM F-die is organized as a 16Mbit x 16 IOs x 8 banks device
• Internal (Self) Calibration On Die Termination using ODT pin
• Asynchronous Reset
• Package: 96 balls FBGA-x16
• All Lead-Free products are compliant for RoHS
• All products are Halogen-free