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MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V

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MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V

MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V
MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V

Large Image :  MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V

Product Details:
Place of Origin: CN
Brand Name: micron
Certification: rohs
Model Number: MT41K128M16JT-125:k
Document: 1457707240225.pdf
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: consult with
Packaging Details: T/R
Delivery Time: 5-8days
Payment Terms: T/T,Western Union
Supply Ability: 100000
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MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V

Description
Operating Temperature: 0℃~+95℃ Operating Voltage: 1.283V~1.45V
Memory Architecture (format): DDR3L SDRAM Storage Capadity: 2Gbit
Clock Frequency (fc): 800MHz Operating Current: 46mA
Highlight:

2Gb DDR3L SDRAM memory chip

,

800MHz DDR3L SDRAM with 1.283V~1.45V

,

x4 x8 x16 DDR3L SDRAM chip

MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V
The MT41K128M16JT-125:k 2Gb DDR3L SDRAM is a low-voltage memory solution offering x4, x8, and x16 configurations at 800MHz with an operating voltage range of 1.283V to 1.45V.
Product Overview
The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. This product meets all functional and timing specifications listed in the equivalent density standard or automotive DDR3 SDRAM data sheet available on Micron's official website.
Key Features
  • VDD = VDDQ = 1.35V (1.283-1.45V)
  • Backward-compatible to VDD = VDDQ = 1.5V ±0.075V
  • Differential bidirectional data strobe
  • 8n-bit prefetch architecture
  • Differential clock inputs (CK, CK#)
  • 8 internal banks
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Programmable CAS (READ) latency (CL)
  • Programmable posted CAS additive latency (AL)
  • Programmable CAS (WRITE) latency (CWL)
  • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via mode register set [MRS])
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Self refresh mode
  • TC of 0°C to +95°C: 64ms, 8192-cycle refresh at 0°C to +85°C; 32ms at +85°C to +95°C
  • Self refresh temperature (SRT)
Technical Parameters
Parameter 512 Meg x 4 256 Meg x 8 128 Meg x 16
Configuration 64 Meg x 4 x 8 banks 32 Meg x 8 x 8 banks 16 Meg x 16 x 8 banks
Refresh count 8K 8K 8K
Row address 32K A[14:0] 32K A[14:0] 16K A[13:0]
Bank address 8 BA[2:0] 8 BA[2:0] 8 BA[2:0]
Column address 2K A[11, 9:0] 1K A[9:0] 1K A[9:0]
MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V 0 MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V 1 MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V 2
Packaging & Shipping
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their specific requirements.
Frequently Asked Questions
How to obtain the price?
We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.
What is your delivery time?
Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.
What are your payment terms?
Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.
What are the shipping options?
Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.

Tag:

dram chip,

chip dram,

dram memory chips

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