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W9425G6KH-5 4 M 4 BANKS 16 BITS DDR SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory

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W9425G6KH-5 4 M 4 BANKS 16 BITS DDR SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory

W9425G6KH-5 4 M 4 BANKS 16 BITS DDR SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory
W9425G6KH-5 4 M 4 BANKS 16 BITS DDR SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory W9425G6KH-5 4 M 4 BANKS 16 BITS DDR SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory W9425G6KH-5 4 M 4 BANKS 16 BITS DDR SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory

Large Image :  W9425G6KH-5 4 M 4 BANKS 16 BITS DDR SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory

Product Details:
Place of Origin: CN
Brand Name: Winbond
Certification: rohs
Model Number: W9425G6KH-5
Document: 1461725215522.pdf
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: consult with
Packaging Details: T/R
Delivery Time: 5-8days
Payment Terms: T/T,Western Union
Supply Ability: 100000
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W9425G6KH-5 4 M 4 BANKS 16 BITS DDR SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory

Description
Operating Temperature: 0℃~+70℃ Operating Voltage: 2.3V~2.7V
Memory Architecture (format): DDR SDRAM Storage Capadity: 256Mbit
Clock Frequency (fc): 200MHz Operating Current: 65mA
Highlight:

DDR SDRAM memory chip

,

16 bits DRAM memory

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CMOS dynamic random access memory

W9425G6KH-5 4M 4 Banks 16-Bit DDR SDRAM
CMOS Double Data Rate Synchronous Dynamic Random Access Memory
Product Overview
W9425G6KH-5 4M 4 Banks 16-Bit DDR SDRAM is a CMOS Double Data Rate Synchronous Dynamic Random Access Memory designed for high-performance applications.
Key Features
  • 2.5V ± 0.2V Power Supply for DDR400
  • Up to 200 MHz Clock Frequency
  • Double Data Rate architecture: two data transfers per clock cycle
  • Differential clock inputs (CLK and CLK)
  • DQS edge-aligned with data for Read; center-aligned with data for Write
  • CAS Latency: 2, 2.5 and 3
  • Burst Length: 2, 4 and 8
  • Auto Refresh and Self Refresh
  • Precharged Power Down and Active Power Down
  • Write Data Mask
  • Write Latency = 1
  • 7.8µS refresh interval (8K/64 mS refresh)
  • Maximum burst refresh cycle: 8
  • Interface: SSTL_2
  • Packaged in TSOP II 66-pin, using Lead-free materials with RoHS compliance
Part Number Specifications
Part Number Speed Self Refresh Current (Max.) Operating Temperature
W9425G6KH-5 DDR400/CL3 2 mA 0°C ~ 70°C
W9425G6KH-5I DDR400/CL3 2 mA -40°C ~ 85°C
Product Images
W9425G6KH-5 4 M 4 BANKS 16 BITS DDR SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory 0 W9425G6KH-5 4 M 4 BANKS 16 BITS DDR SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory 1 W9425G6KH-5 4 M 4 BANKS 16 BITS DDR SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory 2
Packaging & Shipping
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.
Frequently Asked Questions
How to obtain the price?
We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.
What is your delivery time?
Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.
What are your payment terms?
Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.
What are the shipping options?
Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.

Tag:

dram chip,

chip dram,

dram memory chips

Contact Details
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Contact Person: Mr. Sun

Tel: +8618824255380

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