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8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD

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8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD

8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD
8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD 8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD 8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD

Large Image :  8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD

Product Details:
Place of Origin: KR
Brand Name: SAMSUNG
Certification: ROHS
Model Number: K4A8G165WC-BITD
Document: 06257D8C37A1B57F18DD60B9E3E...09.pdf
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: CONSULT WITH
Packaging Details: T/R
Delivery Time: 5-8DAY
Payment Terms: Western Union,T/T
Supply Ability: 10000
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8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD

Description
Product Catalogue: Memory >Dynamic Random Access Memory DRAM Universal Packaging : FBGA-96
RoHS: Compliance Installation Method: Surface Mount Installation
Operating Temperature: -40~95°C Application Grade: Industrial Grade
Packaging Method: Pallet Storage Capacity: 512Mx16
Highlight:

8Gb DRAM Memory Chip DDR4

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C die DRAM Memory Chip DDR4

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K4A8G165WC-BITD

Dynamic Random Access Memory DRAM 8Gb C-die DDR4 SDRAM K4A8G165WC-BITD
Product Specifications
Attribute Value
Product Catalogue Memory > Dynamic Random Access Memory DRAM
Universal packaging FBGA-96
RoHS Compliance
Installation method Surface mount installation
Operating temperature -40~95°C
Application grade Industrial grade
Packaging method Pallet
Storage capacity 512Mx16
Technical Details
  • JEDEC standard 1.2V (1.14V-1.26V) operation
  • VDDo = 1.2V (1.14V-1.26V), VPp = 2.5V (2.375V-2.75V)
  • Speeds up to 3200Mb/sec/pin (DDR4-3200)
  • 8 Banks (2 Bank Groups) organization
  • Programmable CAS Latency and CAS Write Latency
  • 8-bit pre-fetch architecture
  • Bi-directional Differential Data-Strobe
  • Internal self calibration through ZQ pin (RZQ: 240 ohm±1%)
  • On Die Termination using ODT pin
  • Asynchronous Reset capability
  • CRC (Cyclic Redundancy Check) for data security
  • Command address parity check
  • Data Bus Inversion (DBI) support
  • Gear down mode available
  • POD (Pseudo Open Drain) interface
Product Images
8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD 0 8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD 1 8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD 2
Packaging Information

Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.

Frequently Asked Questions
How to obtain the price?

We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly via email or other available methods.

What is your delivery time?

Delivery time depends on order quantity and season. Small batches typically ship within 7-15 days, while larger orders may require approximately 30 days.

What are your payment terms?

Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.

What are your shipping options?

We offer sea, air, or express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred shipping method before ordering.

How do you maintain long-term customer relationships?

We prioritize quality and competitive pricing to ensure customer satisfaction. We value every business relationship and approach all transactions with sincerity and professionalism.

Contact Details
Shenzhen Filetti Technology Co., LTD

Contact Person: Mr. Sun

Tel: 18824255380

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