512k X 16 SRAM Chip IS62WV51216BLL-55TLI CMOS Low Voltage

512K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS Static Random Access Memory SRAM IS62WV51216BLL-55TLI

• High-speed access time: 45ns, 55ns
• CMOS low power operation: 36 mW (typical) operating, 12 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply: 2.5V--3.6V VDD (62WV51216BLL)
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available

The ISSI IS62WV51216ALL/IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques yields high performance and low power consumption devices.

When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

The IS62WV51216ALL and IS62WV51216BLL are packaged in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm) and 44-Pin TSOP (TYPE II).

• Standard export packaging
• Customers can choose from cartons, wooden cases and wooden pallets according to their own requirements