IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

Name: IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96
Brand: Shenzhen Filetti Technology Co., LTD
SKU: IS43TR16256BL-125KBLI
Availability: InStock

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IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

Large Image : IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

Product Details:

Place of Origin:	TWN
Brand Name:	ISSI
Certification:	ROSH
Model Number:	IS43TR16256BL-125KBLI
Document:	C1349408_C28B7EA490C7FA8CAF...01.pdf

Payment & Shipping Terms:

Minimum Order Quantity:	1
Packaging Details:	T/R
Delivery Time:	5-8DAY
Payment Terms:	Western Union,T/T
Supply Ability:	10000

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IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

Description

Operating Voltage Range:	1.14V To 1.26V	Data Rate:	2400 MT/s
Packaging Method:	Woven Tape	Buffering:	Unbuffered
Form Factor:	DIMM	Data Retention:	Retains Data As Long As Power Is Supplied
Access Time:	Typically 5ns To 20ns	Interface:	Asynchronous Or Synchronous
Rohs:	Compliance	Cas Latency:	CL17
Universal Packaging:	LBGA-64	Installation Method:	Surface Mount Installation
Error Checking:	Parity	Organization:	32 K X 8
Operating Voltage:	1.8V To 5V
Highlight:	4GB Capacity DRAM Chip , 800MHz Speed DDR3 SDRAM , BGA-96 Packaging Memory Module

DYNAMIC RANDOM ACCESS MEMORY DRAM IS43TR16256BL-125KBLI 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

IS43/46TR16256B, IS43/46TR16256BL,IS43/46TR85120B, IS43/46TR85120BLIntegrated Silicon Solution, 512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
High speed data transfer rates with system frequency upto 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
Refresh Interval:7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C3.9 µs (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Up to 200MHz in DLL off mode
Operating temperature:Commercial (TC = 0°C to +95°C)Industrial (TC = -40°C to +95°C)Automotive, A1 (TC = -40°C to +95°C)Automotive, A2 (TC = -40°C to +105°C)Automotive, A25 (TC = -40°C to +115°C)Automotive, A3 (TC = -40°C to +125°C)1.95 µs (8192 cycles/16 ms) Tc= 105°C to 115°C0.97 µs (8192 cycles/8 ms) Tc= 115°C to 125°C

ADDRESS TABLE

Parameter	512Mx8	256Mx16
Row Addressing	A0-A15	A0-A14
Column Addressing	A0-A9	A0-A9
Bank Addressing	BA0-2	BA0-2
Page size	1KB	2KB
Auto Precharge Addressing	A10/AP	A10/AP
BL switch on the fly	A12/BC#	A12/BC#

OPTIONS

Configuration: 512Mx8, 256Mx16
Package:96-ball BGA (9mm x 13mm) for x1678-ball BGA (8mm x 10.5mm) for x8

IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96 0

IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96 1

IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96 2

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Contact Person: Mr. Sun

Tel: 18824255380

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IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

4GB Capacity DRAM Chip

800MHz Speed DDR3 SDRAM

BGA-96 Packaging Memory Module

chip sram,

sram memory chip,